Phosphorus-doped silicon films prepared by low pressure chemical vapour deposition of disilane and phosphine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Synthesis of Photochromic and Cathodochromic Sodalite
2. Some recent trends in the preparation of thin layers by low pressure chemical vapour deposition
3. P‐Doped Polysilicon Film Growth Technology
4. The LPCVD Polysilicon Phosphorus Doped In Situ as an Industrial Process
5. Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane
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1. Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine;Journal of Applied Physics;1999-08-15
2. Deposition;Polycrystalline Silicon for Integrated Circuits and Displays;1998
3. Characterization of In Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition;Journal of The Electrochemical Society;1997-11-01
4. A supersonic molecular beam study of the chemisorption of PH3 on the Si(100) surface;Surface Science;1995-12
5. Effect of PH3 on the dissociative chemisorption of SiH4 and Si2H6 on Si(100): Implications on the growth of in situ doped Si thin films;Applied Physics Letters;1995-04-10
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