On the mechanism of the ion sensitive field effect transistor-Reference-Cited by-同舟云学术

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On the mechanism of the ion sensitive field effect transistor

Published:1977-03 Issue:2 Volume:41 Page:L43-L47
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Revesz A.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Development, Operation, and Application of the Ion-Sensitive Field-Effect Transistor as a Tool for Electrophysiology

2. Overzicht, Ontwikkeling en Toepassing van ISFET's;de Rooij,1976

3. Glass Electrodes for Hydrogen and Other Cations,1967

4. Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation;ECS Journal of Solid State Science and Technology;2024-04-01

2. Hydrogen-atom-mediated electrochemistry;Nature Communications;2013-11-12

3. Field Effect Chemical Sensors;Sensors;2008-05-26

4. Principles of ChemFET Operation;Chemical Sensing with Solid State Devices;1989

5. pH dependence of the Si/SiO2 interface state density for EOS systems;Journal of Electroanalytical Chemistry and Interfacial Electrochemistry;1985-10

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