Preparation and dielectric properties of Si3N4 thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Silicon-gate technology
2. A low temperature process for the reactive formation of Si3N4 layers on InSb
3. C/V measurements of m.i.s. structures on n-InSb formed by room temperature reactive deposition of Si3N4
4. The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge Reaction
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3. Dielectric properties of RF-sputtered silicon nitride thin films with gold electrodes;Thin Solid Films;2003-06
4. Conductivity and dielectric properties of silicon nitride thin films prepared by RF magnetron sputtering using nitrogen gas;Thin Solid Films;2003-01
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