Non-destructive determination of free carrier density of epitaxial layers of GaSb by IR reflectivity measurement-Reference-Cited by-同舟云学术

Non-destructive determination of free carrier density of epitaxial layers of GaSb by IR reflectivity measurement

Published:1987-12 Issue:1 Volume:155 Page:125-132
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Schirar S.,Bayo L.,Melouah A.,Bougnot J.,Llinares C.,Montaner A.,Galtier M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Proc. 5th European Solid State Device Research Conf.;Bougnot,1985

2. Croissance de GaSb à partir de triméthyl gallium et triméthyl antimoine sur substrats GaAs et GaSb; Premières caractérisations électriques et optiques;Melouah,1985

3. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

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