Close-spaced vapour transport of CuInSe2, CuGaSe2, CuGaSe2 and Cu(Ga, In) Se2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors
2. The Epitaxy of ZnSe on Ge, GaAs, and ZnSe by an HCl Close-Spaced Transport Process
3. Copper Indium Disulfide Films by Close Spacing Chemical Transport
4. Epitaxy of GaAs by the Close‐Spaced Vapor Transport Technique
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3. CuInS2 thin films obtained through an innovative CSVT deposition method from solvothermal-generated precursors;Materials Science in Semiconductor Processing;2018-08
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5. Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0,3In0,7Se2 thin films using close spaced vapor transport technique;Thin Solid Films;2012-05
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