Core and valence electron excitations of amorphous silicon oxide and silicon nitride studied by low energy electron loss spectroscopy-Reference-Cited by-同舟云学术

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Core and valence electron excitations of amorphous silicon oxide and silicon nitride studied by low energy electron loss spectroscopy

Published:1979-08 Issue:2 Volume:61 Page:217-228
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lieske N.,Hezel R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Semiconductors;Wolf,1971

2. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures

3. The Chemical Physics of Surfaces;Morrison,1977

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