The effect of annealing treatment on the microstructure of layers of zinc selenide deposited onto (100) germanium surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Institute of Physics Thin Film Conference;Holt,1973
2. The nucleation and growth of zinc selenide onto (100) germanium surfaces
3. Electron microscopy and diffraction of twinned structures in evaporated films of gold
4. A study of defects in epitaxial films of ZnTe by transmission electron microscopy
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1. Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors;Defect and Diffusion Forum;2003-11
2. The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers;Journal of Electronic Materials;1993-02
3. A technique for the preparation of cross-sectional TEM samples of ZnSe/GaAs heterostructures which eliminates process-induced defects;Journal of Electron Microscopy Technique;1991-07
4. The role of thermal annealing in changing the interfacial microstructure of Ge-ZnSe heterojunctions;Journal of Physics D: Applied Physics;1977-03-11
5. Epitaxial growth of ZnTe on NaCl by ion deposition;Thin Solid Films;1976-12
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