Structure and interface oxidation state of ZnO r.f. sputtered onto silicon and SiO2/Si-Reference-Cited by-同舟云学术

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Structure and interface oxidation state of ZnO r.f. sputtered onto silicon and SiO2/Si

Published:1980-08 Issue:1 Volume:71 Page:23-32
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Raven M.S.,Al-Sinaid M.H.T.,Owen S.J.T.,Tansley T.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Studies of the optimum conditions for growth of rf‐sputtered ZnO films

2. Integrated optical spectrum analyzer: an imminent `chip'

3. Zinc‐oxide–on–silicon acoustically scanned imager with positive sensitivity and storage capabilities

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films;Le Journal de Physique IV;1995-06

2. Radio frequency sputtering and the deposition of high-temperature superconductors;Journal of Materials Science Materials in Electronics;1994-06

3. Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors;Journal of Materials Chemistry;1994

4. Studies on semiconducting thin films prepared by the spray pyrolysis technique for photoelectrochemical solar cell applications: Preparation and properties of ZnO;Solar Energy Materials;1986-10

5. Anomalous thermal desorption from polycrystalline zinc oxide films;Thin Solid Films;1984-11

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