Mechanical stresses in the heterosystem germanium- gallium arsenide-Reference-Cited by-同舟云学术

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Mechanical stresses in the heterosystem germanium- gallium arsenide

Published:1976-04 Issue:3 Volume:33 Page:275-280
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Datsenko L.I.,Klimenko A.P.,Matveyeva L.A.,Prokopenko I.V.,Tkhorik Yu.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Symmetriya i deformacionnye effekty v polyprovodnikach;Bir,1972

2. Crystalline structure of germanium films on silicon substrates

3. Dinamika dislokatsiy;Nikitenko,1968

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High positive magnetoresistance in Ge films at low temperatures;Applied Physics Letters;2017-01-04

2. Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films;Thin Solid Films;2014-01

3. Механизмы дефектообразования при гетероэпитаксии феррошпинелей;Вестник Самарского государственного технического университета. Серия «Физико-математические науки»;2001

4. SixGe1−xGaAs Heterojunction IMPATT-Diodes;Crystal Research and Technology;1986-03

5. Coherency of the interphase boundary and elastic strain in the epitaxial system Ge/GaAs;Physica Status Solidi (a);1983-02-16

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