Application of plasma etching techniques to metal-oxide-semiconductor (MOS) processing-Reference-Cited by-同舟云学术

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Application of plasma etching techniques to metal-oxide-semiconductor (MOS) processing

Published:1980-01 Issue:1 Volume:65 Page:111-123
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Booth R.C.,Heslop C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Pathways in device lithography

2. Etching Characteristics of Silicon and its Compounds by Gas Plasma

3. Fabrication of deep square wave structures with micron dimensions by reactive sputter etching

4. Int. Electron Devices Meeting;Komiya,1973

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2. Fundamental aspect and behavior of saturated fluorocarbons in glow discharge in absence of potential source of hydrogen;Journal of Polymer Science Part A: Polymer Chemistry;1992-07

3. Subtractive Etching;Semiconductor Lithography;1988

4. LiNbO3 - A Practical Optoelectronic Waveguide Technology?;Integrated and Guided-Wave Optics;1988

5. Kinetics of formation and reactions of radicals in radio-frequency pulsed discharges in CCl4/NH3mixtures;Journal of Physics D: Applied Physics;1987-07-14

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