The applications of transmission electron microscopy to the characterization of metal thin films on silicon-Reference-Cited by-同舟云学术

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The applications of transmission electron microscopy to the characterization of metal thin films on silicon

Published:1990-10 Issue:2 Volume:191 Page:221-237
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen L.J.,Lur W.,Cheng J.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference67 articles.

1. Thin Film Interdiffusion and Reactions;Tu,1978

2. Materials and Process Characterization;Nicolet,1983

3. Silicide for VLSI Applications;Murarka,1983

4. Physics of Semiconductor Devices;Sze,1981

5. Ohmic Contacts to Semiconductors;Lepselter,1969

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical studies of nickel silicide formation through a thin Ti layer;Applied Surface Science;1996-09

2. Intermixing at Au-In interfaces as studied by photoelectron spectroscopy;Physical Review B;1995-06-15

3. Reaction synthesis of high-temperature silicides;Materials Science and Engineering: A;1995-02

4. Multilevel Contact System with a Thin Silicide Reaction Controlling Interlayer;MRS Proceedings;1993

5. Epitaxial growth of transition-metal silicides on silicon;Materials Science Reports;1991-03

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