Depletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons-Reference-Cited by-同舟云学术

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Depletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons

Published:2004-07 Issue:12 Volume:19 Page:1703-1709
ISSN:0956-5663
Container-title:Biosensors and Bioelectronics
language:en
Short-container-title:Biosensors and Bioelectronics

Author:

Cohen Ariel,Spira Micha E,Yitshaik Shlomo,Borghs Gustaaf,Shwartzglass Ofer,Shappir Joseph

Publisher

Elsevier BV

Subject

Electrochemistry,Biomedical Engineering,General Medicine,Biophysics,Biotechnology

Reference16 articles.

1. Extracellular potential recordings by means of a field effect transistor without gate metal, called OSFET;Bergveld;IEEE Trans. Biomed. Eng.,1976

2. Extracellular recording with transistors and the distribution of ionic conductances in a cell membrane;Fromherz;Eur. Biophys. J.,1999

3. Electrical interfacing of nerve cells and semiconductor chips;Fromherz;Chemphyschem,2002

4. A neuron–silicon junction: a Retzius cell of the leech on an insulated-gate field-effect transistor;Fromherz;Science,1991

5. Silicon–neuron junction: capacitive stimulation of an individual neuron on a silicon chip;Fromherz;Phys. Rev. Lett.,1995

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