Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy-Reference-Cited by-同舟云学术

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Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Published:2010-12 Issue: Volume:470 Page:S671-S672
ISSN:0921-4534
Container-title:Physica C: Superconductivity and its Applications
language:en
Short-container-title:Physica C: Superconductivity and its Applications

Author:

Nakamura Jin,Kabasawa Eiki,Harada Yoshihisa,Iriyama Shingo,Kawano Akihiro,Oguchi Tamio,Kuroki Kazuhiko,Takano Yoshihiko,Kawarada Hiroshi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Superconductivity in diamond

2. Superconducting properties of homoepitaxial CVD diamond

3. Electronic structure of B2pσandpπstates inMgB2,AlB2,andZrB2single crystals

4. Holes in the Valence Band of Superconducting Boron-Doped Diamond Film Studied by Soft X-ray Absorption and Emission Spectroscopy

5. S. Iriyama et al., private communications.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local structure analysis of heavily boron-doped diamond by soft x-ray spectroscopy;Diamond and Related Materials;2013-10

2. Electronic/chemical State Analysis of Light Element Materials Using Synchrotron-Radiation Soft X-ray Spectroscopy;Materia Japan;2013

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