Orientational control of CeO2 buffer layers on A-plane sapphire substrates for REBa2Cu3O7−σ thin films
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. EuBa2Cu3O7-δThin Films Grown on Sapphires with Epitaxial CeO2Buffer Layers
2. HTS hairpin microstrip filter on r-cut sapphire substrate
3. Hetero-Epitaxial Growth of YBCO Thin Films on the A-Cut Plane Sapphire Substrates
4. Fabrication and characterization of YBCO thin film on CeO2/a-plane sapphire substrate
5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Preparation of Trifluoroacetate Metal Organic Deposition Derived REBa2Cu3O y Thin Film With High-J c and Low-R s for High-Power High-Temperature Superconducting Transmit Filters;IEEE Transactions on Applied Superconductivity;2023-08
2. Trifluoroacetate metal organic deposition derived (Y0.77Gd0.23)Ba2Cu3Oyfilms on CeO2bufferedR-plane Al2O3substrates;Japanese Journal of Applied Physics;2018-02-19
3. Effect of annealing atmosphere on the epitaxial growth process of La2Zr2O7 films on different substrates;Ceramics International;2013-01
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