Wohlleben Effect and Emergent π junctions in superconducting Boron doped Diamond thin films-Reference-Cited by-同舟云学术

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Wohlleben Effect and Emergent π junctions in superconducting Boron doped Diamond thin films

Published:2022-07 Issue: Volume:598 Page:1354065
ISSN:0921-4534
Container-title:Physica C: Superconductivity and its Applications
language:en
Short-container-title:Physica C: Superconductivity and its Applications

Author:

Govindaraj L.,Arumugam S.,Thiyagarajan R.,Kumar Dinesh,Kannan M.,Das Dhruba,Suraj T.S.,Sankaranarayanan V.,Sethupathi K.,Baskaran G.,Sankar Raman,Rao M.S.Ramachandra

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Diamond as an electronic material;Wort;Mater. Today.,2008

2. Activation energy in low compensated homoepitaxial boron-doped diamond films;Lagrange;Diam. Relat. Mater.,1998

3. Superconductivity in diamond;Ekimov;Nature,2004

4. Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films;Bustarret;Phys. Rev. Lett.,2004

5. Superconducting properties of homoepitaxial CVD diamond;Takano;Diam. Relat. Mater.,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Field Paramagnetic Meissner Effect and Paramagnetic Response of Superconducting Solid Solution (Pbzsn1-Z)1-Xinxte;2024

2. The Paramagnetic Meissner Effect (PME) in Metallic Superconductors;Metals;2023-06-19

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