Atomic nitrogen source for the formation of aluminum nitride tunnel barrier SIS junctions-Reference-Cited by-同舟云学术

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Atomic nitrogen source for the formation of aluminum nitride tunnel barrier SIS junctions

Published:2009-10 Issue:15-20 Volume:469 Page:1589-1592
ISSN:0921-4534
Container-title:Physica C: Superconductivity
language:en
Short-container-title:Physica C: Superconductivity

Author:

Endo A.,Noguchi T.,Kroug M.,Tamura T.,Inoue H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Optimizing Superconducting Matching Circuits for Nb SIS Mixers Operating Around the Gap Frequency

2. Superconducting digital electronics

3. Characterization of the fabrication process of Nb/Al$ndash$AlNx/Nb tunnel junctions with low RnA values up to 1 $\Omega$ $\mu$m2

4. Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

5. High growth rate GaN films using a modified electron cyclotron resonance plasma source

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Spectroscopic Study of AlN-Based SIS Devices Grown by Inductively Coupled Plasma;IEEE Transactions on Applied Superconductivity;2019-08

2. Synthesis and Characterization of Borides, Carbides, and Nitrides and Their Applications;Materials Under Extreme Conditions;2017

3. Optical Spectroscopic Analysis of ICP Nitridation for SIS Junctions With AlN Barriers;IEEE Transactions on Applied Superconductivity;2015-06

4. Origin of subgap current in an SIS junction;AIP Conference Proceedings;2009

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