Anodic current transient for n-Si|SiO2 electrodes in HF solution: the relationship between the current and the interface structure-Reference-Cited by-同舟云学术

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Anodic current transient for n-Si|SiO2 electrodes in HF solution: the relationship between the current and the interface structure

Published:2004-07 Issue: Volume:568 Page:353-363
ISSN:1572-6657
Container-title:Journal of Electroanalytical Chemistry
language:en
Short-container-title:Journal of Electroanalytical Chemistry

Author:

Bensliman F,Mizuta N,Matsumura M

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering,Analytical Chemistry

Reference43 articles.

1. The Physics of SiO2 and Its Interfaces;Pantelides,1978

2. The Physics and Chemistry of SiO2 and the Si–SiO2 Interface;Helms,1988

3. MOS (Metal Oxide Semiconductor) Physics and Technology;Nicollian,1982

4. Chemical and electronic structure of the SiO2/Si interface

5. ULSI Science and Technology;Cellar,1993

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