Characterization of ultrashort-period GaAs/AlAs superlattices by exciton photoluminescence
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference9 articles.
1. Excitonic processes in GaAs/AlAs type-II superlattices
2. Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wells
3. Valley-mixing effects in short-period superlattices
4. Energy levels of very short‐period (GaAs)n‐(AlAs)nsuperlattices
5. Nature of the lowest confined electron state in GaAs/AlAs type II quantum wells as a function of AlAs thickness
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures;Journal of Low Temperature Physics;2016-01-06
2. Spatial fluctuation enhancement and nonradiative-recombination-center generation due to high Si-doping into GaAs/AlAs short-period-superlattices;Physica B: Condensed Matter;2006-04
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