Ab initio calculations of some electronic and elastic properties for SiC polytypes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,General Chemistry
Reference37 articles.
1. Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties
2. Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties
3. Structural and electronic properties of cubic, 2H, 4H, and 6HSiC
4. Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap
5. Ab initioelectronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
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1. Retracted: Micromechanical properties characterization of 4H–SiC single crystal by indentation and scratch methods;Materials Science in Semiconductor Processing;2024-09
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3. Determining the thermal conductivity and phonon behavior of SiC materials with quantum accuracy via deep learning interatomic potential model;Journal of Nuclear Materials;2024-04
4. Effect of the point defect of silicon carbide cladding on mechanical properties: a molecular-dynamics study;Chemical Papers;2024-03-20
5. Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests;Chinese Journal of Mechanical Engineering;2023-09-25
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