Energetic evaluation of the semiconducting mono-, sesqui-, and di-silicides of the 8th group elements (Fe, Ru and Os) using first-principle calculations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,General Chemistry
Reference20 articles.
1. An assessment of the Fe-C-Si system
2. Formation of a series of chimney–ladder compounds in the Ru–Re–Si system
3. The observed crystallographic parameters for compounds are referred from the followings:
4. Thermal expansion of AlN, sapphire, and silicon
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1. Growth of Ru-doped β-FeSi2 polycrystalline thin films by RF magnetron sputtering;Japanese Journal of Applied Physics;2022-12-15
2. Effect of High-Temperature Annealing on Epitaxially Grown Ru Silicide Thin Films;Silicon;2019-12-06
3. Energetic consideration of defected rhenium disilicide, ReSi 2-x, and the electronic structure of Re 4 Si 7 (ReSi 1.75 ), revisited;Computational Condensed Matter;2018-03
4. Ab-Initio Investigation of Nowotny Chimney Ladder Silicide Os2Si3 Using the Modified BJ Potential;Zeitschrift für Physikalische Chemie;2016-03-16
5. Formation rule of β-FeSi2 phases in (Fe, M)Si2 ternary alloys;Acta Physica Sinica;2010
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