Measurement of erosion yields for a SiC surface on H+, D+ and Ar+ bombardment
Author:
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics
Reference11 articles.
1. Physical and chemical sputtering of graphite and SiC by hydrogen and helium in the energy range of 600 to 7500 eV
2. On the chemical erosion of some low-Z materials by hydrogen plasma and on the possibility of regeneration of the first wall by low pressure plasma CVD
3. MeV He+ bombardment of silicon carbide and carbon
4. Bombardment of SiC by 10 keV H+: Carbon deposition, surface swelling and changes in surface morphology
5. Some Applications of Ion Microprobe Analysis to Problems in Semiconductor Devices
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1. Temperature dependence of the deuterium concentration in C-Si codeposits;Nuclear Materials and Energy;2022-10
2. Diffusion of fission products and radiation damage in SiC;Journal of Physics D: Applied Physics;2013-10-28
3. Surface Patterning Using Blister Exfoliation Induced by Electron Irradiation;Japanese Journal of Applied Physics;2007-12-06
4. Local Oxidation Induced by Inhomogeneous Stress on Blistered Si Surface;Japanese Journal of Applied Physics;2006-05-09
5. Local Oxidation Induced by Inhomogeneous Stress on Blistered Si Surface;Hyomen Kagaku;2004
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