Molecular dynamics calculations of defect energetics in β-SiC
Author:
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics
Reference23 articles.
1. Theoretical calculations of the enthalpies and entropies of diffusion and vacancy formation in semiconductors
2. A. Scholz, Phys. Status Solidi 3 (1063) 43.
3. Verzerrungsfeld und mechanische Relaxation von Leerstellen in Germanium
4. Calculation of the Formation Energy of a Schottky Defect in Germanium
5. New Method for Treating Lattice Point Defects in Covalent Crystals
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