The effect of fission-fragment irradiation upon the oxidation of silicon carbide by oxygen at 950 °C
Author:
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics
Reference8 articles.
1. On the Rates of Oxidation of Silicon and of Silicon Carbide in Oxygen, and Correlation with Permeability of Silica Glass.
2. The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure
3. The effect of fission fragment irradiation upon the oxidation of a 20 wt % Cr, 25 wt % Ni, Nb stabilised stainless steel by oxygen at 650° C
4. Some aspects of the effects of fission fragment irradiation upon the oxidation of austenitic stainless steels by oxygen at 650° and 800 °C
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of neutron irradiation on passive oxidation of silicon carbide;Journal of Nuclear Materials;1996-10
2. Oxidation Behaviour of Infiltrated Reaction Bonded Silicon Carbide;Transactions of the Indian Ceramic Society;1990-01
3. Characteristics of radio frequency silicon carbide films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1987-09
4. Silicon Carbide, SiC;Si Silicon;1985
5. Properties of Silicon Carbide for Nuclear Fuel Particle Coatings;Nuclear Technology;1977-09
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