Atomic depth distribution and growth modes of Ga on Si(111)-2√3 × 2√3-Sn and √3 × √3-Ag
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. A new surface analysis by soft X-ray excited by low energy electron beam;e-Journal of Surface Science and Nanotechnology;2006
2. Transition from alloying layer growth to island growth of Sn on a Ga-covered Si surface;Surface Science;2003-03
3. Isothermal adsorption and desorption studies of In/Si() by reflection high energy electron diffraction and fluorescent X-ray spectroscopy;Surface Science;2003-02
4. Direct observation of growth motion of elements by ultrahigh vacuum scanning electron microscopy combined with total reflection angle x-ray spectroscopy;Surface and Interface Analysis;2003-01
5. Atomic depth distribution and growth modes of Sn on Si(111)–4×1-In and α-√3×√3-Au surfaces at room temperature;Journal of Crystal Growth;2002-12
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