Thermoelectric properties of GaAs/Ga1−xAlxAs heterojunctions in the fractional quantum Hall regime-Reference-Cited by-同舟云学术

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Thermoelectric properties of GaAs/Ga1−xAlxAs heterojunctions in the fractional quantum Hall regime

Published:1994-03 Issue:1-3 Volume:305 Page:91-95
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Zeitler U.,Fletcher R.,Maan J.C.,Foxon C.T.,Harris J.J.,Wyder P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference19 articles.

1. Experimental results on the high-field thermopower of a two-dimensional electron gas in a GaAs-Ga1−xAlxAs heterojunction

2. Thermoelectric properties of GaAs-Ga1−xAlxAs heterojunctions at high magnetic fields

3. A search for trends in the thermopower of GaAs-Ga1-xAlxAs heterojunctions

4. Thermomagnetic behaviour of the two-dimensional electron gas in GaAsAlxGa1−xAs heterostructures

5. Electron-phonon drag effect at 2D Landau levels

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comment on “Missing2kFResponse for Composite Fermions in Phonon Drag”;Physical Review Letters;2002-03-21

2. Magnetothermoelectric effects in semiconductor systems;Semiconductor Science and Technology;1999-01-01

3. Electrical and thermal transport of composite fermions;Physical Review B;1997-12-15

4. Thermoelectric power in the quantum-Hall regime at very low temperatures;Physica B: Condensed Matter;1995-05

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