Density of states of the two-dimensional electron system at Si-MOS and Si-MNOS devices in the quantum Hall regime
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
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1. Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents;Physical Review B;2004-08
2. Dissipation by Diffusion in Quantum Hall Systems;Europhysics Letters (EPL);1995-01-10
3. Breakdown of the quantum Hall effect as a function of the filling factor and the contact configuration;Journal of Physics: Condensed Matter;1992-04-13
4. Modelling the breakdown of the quantum hall effect in silicon-MISFET'S and GaAs/GaAlAs-heterostructures;Superlattices and Microstructures;1992-01
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