Optical measurements of Landau level density of states and coulomb gaps under FQHE in Si MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. High-field photoluminescence in GaAs single heterojunctions;Physica B: Condensed Matter;1993-02
2. Filling factor dependent Landau level broadening studied with inter- and intraband magneto-optics in GaInAs/AlInAs MDQWs;Surface Science;1992-02
3. Temperature dependence of the luminescence from a two-dimensional electron system in the Wigner solid regime;Surface Science;1992-02
4. Chapter 1 Laser Spectroscopy of Semiconductors at Low Temperatures and High Magnetic Fields;Semiconductors and Semimetals;1992
5. Magneto-Optics and Transport Measurements as a Probe of the Fractional QHE and the Electron Solid Regimes: Review and New Results;Low-Dimensional Electronic Systems;1992
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