Coherent properties of in-plane gated InGaAs/AlGaAs submicron rings
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Normal-metal Aharonov-Bohm effect in the presence of a transverse electric field
2. Gated, asymmetric rings as tunable electron interferometers
3. Correlations between Aharonov-Bohm effects and one-dimensional subband populations in GaAs/AlxGa1−xAs rings
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1. Amplitude of Aharonov-Bohm oscillations in a small semiconductor ring interferometer in the tunneling regime;Journal of Experimental and Theoretical Physics Letters;2005-07
2. Ring interferometer on the basis of 2D electron gas in a double quantum well;Journal of Experimental and Theoretical Physics Letters;2003-11
3. Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas;Journal of Experimental and Theoretical Physics Letters;2000-08
4. Coherence properties of submicron GaAs/AlGaAs rings with a ferromagnetic gate;Physica E: Low-dimensional Systems and Nanostructures;1998-07
5. Reference key and author index for Part III;Landolt-Börnstein - Group III Condensed Matter
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