The effect of surface states and band bending change on reflectivity of cleaved GaAs(110) and GaP(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference25 articles.
1. Evidence for a Surface-State Exciton on GaAs(110)
2. Electronic surface properties of Ga and In containing III–V compounds
3. (110) surface states of GaAs: Sensitivity of electronic structure to surface structure
4. Atomic geometries of ZnSe(110) and GaAs(110): Determination by photoemission spectroscopy
5. Intrinsic unoccupied surface states at GaAs(110)
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