Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering-Reference-Cited by-同舟云学术

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Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering

Published:1990-05 Issue:3 Volume:231 Page:L196-L200
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Hara S.,Slijkerman W.F.J.,van der Veen J.F.,Ohdomari I.,Misawa S.,Sakuma E.,Yoshida S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference32 articles.

1. Silicon Carbide — 1973,1973

2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

3. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si

4. The electronic structure of cubic SiC grown by chemical vapor deposition on Si(100)

5. Band structure and electronic properties of native defects in cubic SiC

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1. 3C-SiC(001)-3 × 2 reconstructed surface analyzed by high-resolution medium energy ion scattering;Surface Science;2012-12

2. Modeling of the effects of substrate temperature and C2-containing plasma pressure on the structure of carbon films;Inorganic Materials;2012-08-15

3. Model of the nucleation and growth of amorphous and crystalline films of diamond-like materials: The (100) plane;Russian Journal of Physical Chemistry A;2012-02-27

4. Modeling and simulating the nucleation of amorphous or crystalline films of diamond-like materials;Russian Microelectronics;2011-12

5. Weak dimers and soft phonons on the β-SiC(100) surface;Journal of Physics: Condensed Matter;2009-03-31

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