Two-dimensional electron systems in Si/SixGe1−x strained-layer superlattices-Reference-Cited by-同舟云学术

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Two-dimensional electron systems in Si/SixGe1−x strained-layer superlattices

Published:1986-08 Issue:1-3 Volume:174 Page:640-645
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Abstreiter G.,Brugger H.,Wolf T.,Jorke H.,Herzog H.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. A one-dimensional SiGe superlattice grown by UHV epitaxy

2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices

4. Modulation doping in GexSi1−x/Si strained layer heterostructures

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1. Improvement of the direct optical transition probability in Si by wavefunction engineering;Applied Physics B;2006-01-06

2. Raman Spectroscopy for Characterization of Layered Semiconductor Materials and Devices;Light Scattering in Semiconductor Structures and Superlattices;1991

3. Optical study of probability densities in quantum well eigenstates;Surface Science;1990-04

4. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography;Advances in Physics;1990-04

5. Chapter 4 Group-IV Compounds;Strained-Layer Superlattices: Materials Science and Technology;1990

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