High electron mobility transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference72 articles.
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4. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
5. Selectively doped GaAs/N–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applications
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement;Semiconductor Science and Technology;1991-10-01
2. Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE;Very High Speed Integrated Circuits: Heterostructure;1990
3. Organometallic vapor phase epitaxial growth of GaAs‐based pseudomorphic modulation‐doped field‐effect transistor structures;Applied Physics Letters;1989-11-20
4. Remote impurity scattering in GaAsAlGaAs heterojunctions;Superlattices and Microstructures;1989-01
5. Low-Temperature Electron Transport in Quasi-Two-Dimensional Systems;physica status solidi (b);1988-10-01
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