The properties of hydrogenic donors confined in GaAsAlGaAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Nodal Hydrogenic Wave Functions of Donors on Semiconductor Surfaces
2. Electronic states of impurities located at or near semiconductor–insulator interfaces
3. Hydrogenic impurity states in a quantum well: A simple model
4. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
5. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
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1. Far-infrared absorption spectra of doped quantum well structures;Journal of Applied Physics;2001-08
2. Polaron effects on the binding energy of a double donor impurity in quantum wells in an electric field;Superlattices and Microstructures;2000-04
3. Donor energies in a quantum well: A perturbation approach;Physical Review B;1999-06-15
4. Impurity bound polaron in a magnetic field in quantum-well structures;Superlattices and Microstructures;1997-10
5. Energy of a bound polaron in a magnetic field in asymmetric polar semiconductor heterostructures;Zeitschrift für Physik B Condensed Matter;1997-06
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