High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. Molecular Beam Epitaxy;Herman,1989
2. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer
3. Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100)
4. Application of high-resolution electron-energy-loss spectroscopy to MBE grown GaAs(100)
5. Observation of Long-Wavelength Interface Phonons in a GaAs/AlGaAs Superlattice
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity;Physics of the Solid State;2004-10
2. Observation of a linear dependence of the frequency splitting between GaAs and AlAs optical surface phonons as a function of Al concentration inAlxGa1−xAs;Physical Review B;1993-08-15
3. Investigation of the AlAsGaAs interface by high resolution electron energy loss spectroscopy;Applied Surface Science;1992-01
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