Reactivity at interfaces of Cu, Ag and Au-GaSe layered compounds

Author:

Tambo T.,Tatsuyama C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Nanoscale Organization of GaSe Quantum Dots on a Gold Surface;The Journal of Physical Chemistry C;2009-10-08

2. Electronic Properties of Van Der Waals-Epitaxy Films and Interfaces;Electron Spectroscopies Applied to Low-Dimensional Materials;2002

3. Properties of gallium selenide single crystal;Progress in Crystal Growth and Characterization of Materials;1994-01

4. Synchrotron-induced surface-photovoltage saturation at intercalated Na/WSe2interfaces;Physical Review B;1992-02-15

5. Interface formation between the layered semiconductors GaSe and InSe;Applied Surface Science;1992-01

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