Epitaxial growth of Fe on sulphur-passivated GaAs(100): a method for preventing As interdiffusion-Reference-Cited by-同舟云学术

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Epitaxial growth of Fe on sulphur-passivated GaAs(100): a method for preventing As interdiffusion

Published:1996-02 Issue:1-3 Volume:346 Page:145-157
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Anderson G.W,Hanf M.C,Qin X.R,Norton P.R,Myrtle K,Heinrich B

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference23 articles.

1. Bimetallic Surface Chemistry

3. Magnetism in man made materials

4. Interface chemistry of metal‐GaAs Schottky‐barrier contacts

5. Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8×2)

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1. Direct observation of high spin polarization in Co2FeAl thin films;Scientific Reports;2018-05-23

2. Bonding Character and Magnetism at the Interface Between Fe and MoS2 Nanosheets;physica status solidi (a);2018-04-26

3. Growth evolution and superparamagnetism of ultrathin Fe films grown on GaN(0001) surfaces;physica status solidi (a);2011-08-10

4. References;Low Molecular Weight Organic Semiconductors;2010-10-04

5. Ultrahigh Vacuum Surface Studies of the Electrochemical Atomic Layer Deposition of Indium Telluride on n-Type GaAs(100);The Journal of Physical Chemistry C;2008-03-25

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