Coherence limiting length scale in ultra high mobility GaAs/AlGaAs heterojunction wires-Reference-Cited by-同舟云学术

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Coherence limiting length scale in ultra high mobility GaAs/AlGaAs heterojunction wires

Published:1992-01 Issue:1-3 Volume:267 Page:277-281
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bird J.P.,Grassie A.D.C.,Lakrimi M.,Hutchings K.M.,Meeson P.,Harris J.J.,Foxon C.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference12 articles.

1. Physical interpretation of weak localization: A time-of-flight experiment with conduction electrons

2. Disordered electronic systems

3. Universal conductance fluctuations in metals: Effects of finite temperature, interactions, and magnetic field

4. The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction material

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1. Experimental study on magnetoresistance phenomena in n-type Si/SiGe quantum wires;Semiconductor Science and Technology;1999-01-01

2. Quantum transport in open mesoscopic cavities;Chaos, Solitons & Fractals;1997-07

3. Carrier scattering processes in quantum wires at high magnetic fields by a correlation field analysis;Physica B: Condensed Matter;1996-01

4. Phase breaking in ballistic quantum dots: Transition from two- to zero-dimensional behavior;Physical Review B;1995-06-15

5. Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires;Japanese Journal of Applied Physics;1995-02-28

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