Quantum wires with strain effect: Tight-binding analysis
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
2. Quantum noise and dynamics in quantum well and quantum wire lasers
3. Gain and the threshold of three-dimensional quantum-box lasers
4. Quantum well lasers--Gain, spectra, dynamics
5. Tight-binding analysis of energy-band structures in quantum wires
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1. Effect of wire spacing on the strain-modified band gap in laterally aligned InGaAs/GaAs quantum wire nanostructures with varying wire widths;Physica E: Low-dimensional Systems and Nanostructures;2004-02
2. InAs Quantum Dots Capped by GaAs, In0.4Ga0.6As Dots, and In0.2Ga0.8As Well;Journal of Nanoscience and Nanotechnology;2002-07-01
3. Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques;Nanotechnology;2001-01-19
4. Potential applications of nanoscale semiconductor quantum devices for information and telecommunications technologies;Materials Science and Engineering: B;2000-05
5. Fabrication of uniform InGaAs/GaAs quantum wires on V-grooved substrate by chemical beam epitaxy;Journal of Crystal Growth;1999-05
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