Electronic properties of semiconductor quantum-wire structures directly grown on (311) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Electron gas in semiconductor multiple quantum wires: Spatially indirect optical transitions
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3. Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement
4. Ideal Crystal Growth from Kink Sites on a GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition
5. Formation of in-plane superlattice and quantum wire states in grid inserted heterostructures with period of 80–160 Å: Anisotropy of electronic states
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1. Effect of substrate orientation on Sb-based MWIR photodetector characteristics;Infrared Physics & Technology;2018-12
2. Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering;Semiconductors;2000-01
3. Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces;Superlattices and Microstructures;1999-07
4. Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity;Japanese Journal of Applied Physics;1999-02-28
5. Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates;Thin Solid Films;1998-12
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