Raman scattering from InAs/AlSb ultrathin-layer superlattices grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Raman and Luminescence Spectroscopies in Technology;Lockwood;SPIE-1336,1990
2. Zone-Folding Effects on Phonons in GaAs-AlAs Superlattices
3. Raman scattering from GaSb/AlSb superlattices: Acoustic, optical, and interface vibrational modes
4. Characterisation of Ga1-xInxAs/Al1-yInyAs multiple quantum wells by Raman scattering
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1. Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates;Journal of Crystal Growth;2019-09
2. Introduction to Space Charge Effects in Semiconductors;Springer Series in Solid-State Sciences;2010
3. Raman scattering of interface modes in ZnTe–CdSe superlattices;Journal of Applied Physics;1996-11-15
4. A Raman scattering study on the interface sharpness of InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy;Journal of Crystal Growth;1995-05
5. Interface control in InAs/AlSb superlattices;Applied Physics Letters;1994-08
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