Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires-Reference-Cited by-同舟云学术

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Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires

Published:1992-01 Issue:1-3 Volume:267 Page:253-256
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Marzin J.Y.,Izrael A.,Birotheau L.,Sermage B.,Roy N.,Azoulay R.,Robein D.,Benchimol J.-L.,Henry L.,Thierry-Mieg V.,Ladan F.R.,Taylor L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference14 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Theoretical Gain of Quantum-Well Wire Lasers

3. Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers

4. Gain and the threshold of three-dimensional quantum-box lasers

5. Optical spectroscopy of ultrasmall structures etched from quantum wells

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures;Physical Review B;2002-04-25

2. Effects of annealing on electron cyclotron resonance plasma-induced damage in GaAs/Ga0.5In0.5P quantum well wires structures;Microelectronic Engineering;1998-03

3. Size dependence of lateral quantum-confinement effects of the optical response inIn0.53Ga0.47As/InP quantum wires;Physical Review B;1995-10-15

4. Investigation of reactive‐ion‐etch‐induced damage of InP/InGaAs multiple quantum wells by photoluminescence;Journal of Applied Physics;1995-08

5. Fabrication of quantum semiconductor structures by high energy electron beam lithography of an inorganic epitaxial resist on GaAs;Superlattices and Microstructures;1994-03

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