Optical characterization of the interface in GaAs/AlAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
2. Enhanced radiative recombination of free excitons in GaAs quantum wells
3. Optical characterization of interface disorder in multi-quantum well structures
4. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study;Applied Surface Science;2008-12
2. Three- and low-dimensional inorganic semiconductors;Progress in Solid State Chemistry;1997-01
3. Spatially localized band-gap renormalization and band-filling effects in three growth-interrupted multiple asymmetric coupled narrow quantum wells;Journal of the Optical Society of America B;1996-03-01
4. The influence of exciton migration on photoluminescence lifetime in growth-interrupted single quantum wells;Materials Science and Engineering: B;1995-12
5. Photoluminescence spectroscopy of growth‐interrupted GaAs/AlAs single quantum wells subjected to hydrogenation;Journal of Applied Physics;1995-02
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