STM study of structural defects on in situ prepared Si(111) 1 × 1-H surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
1. Ideal hydrogen termination of the Si (111) surface
2. Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutions
3. Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4F
4. Electrochemically prepared Si(111) 1×1‐H surface
5. Electronic structure and its dependence on local order for H/Si(111)-(1×1) surfaces
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