The As-terminated Si(001) surface and its oxidation in molecular oxygen: an Si 2p and As 3d core-level study with synchrotron radiation-Reference-Cited by-同舟云学术

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The As-terminated Si(001) surface and its oxidation in molecular oxygen: an Si 2p and As 3d core-level study with synchrotron radiation

Published:1995-03 Issue:3 Volume:326 Page:229-242
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Rochet F.,Poncey C.,Dufour G.,Roulet H.,Rodrigues W.N.,Sauvage M.,Boulliard J.C.,Sirotti F.,Panaccione G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference26 articles.

1. Symmetric arsenic dimers on the Si(100) surface

2. Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals

3. Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As

4. Bonding of As and Se to silicon surfaces

5. Asymmetric versus symmetric dimerization on the Si(001) and As/Si(001)2 × 1 reconstructed surfaces as observed by grazing incidence X-ray diffraction

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface structure of MOVPE-prepared As-modified Si(100) substrates;Applied Surface Science;2024-11

2. Uncovering the Structural Evolution of Arsenene on SiC Substrate;The Journal of Physical Chemistry C;2023-04-13

3. Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams;Applied Surface Science;2022-12

4. Formation of a two-dimensional oxide via oxidation of a layered material;Physical Chemistry Chemical Physics;2022

5. Combining Advanced Photoelectron Spectroscopy Approaches to Analyse Deeply Buried Gap(As)/Si(100) Interfaces: Interfacial Chemical States and Complete Band Energy Diagrams;SSRN Electronic Journal;2022

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