Hemt technology: Impact on computer and communication systems-Reference-Cited by-同舟云学术

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Hemt technology: Impact on computer and communication systems

Published:1990-04 Issue:1-3 Volume:228 Page:504-507
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Mimura T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference15 articles.

1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

2. T. Mimura, M. Abe, A. Shibatomi and M. Kobayashi, Presented at MSS-II, Kyoto, September 1985.

3. Performance of a quarter-micrometer-gate ballistic electron HEMT

4. Optimal noise figure of microwave GaAs MESFET's

5. A new method for calculating the noise parameters of MESFET's and TEGFET's

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1. The High Electron Mobility Transistor;75th Anniversary of the Transistor;2023-07-03

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