Interactions between hot injected electrons and the cold electrons in the two-dimensional electron gas base of a vertical hot electron transistor-Reference-Cited by-同舟云学术

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Interactions between hot injected electrons and the cold electrons in the two-dimensional electron gas base of a vertical hot electron transistor

Published:1992-02 Issue:1-3 Volume:263 Page:141-146
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Matthews P.,Kelly M.J.,Hasko D.G.,Ahmed H.,Frost J.E.F.,Ritchie D.A.,Jones G.A.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference9 articles.

1. High Speed Semiconductor Devices;Luryi,1990

2. Dynamics of extreme nonequilibrium electron transport in GaAs

3. High current gain GaInAs/InP hot electron transistor

4. Room‐temperature operation of hot‐electron transistors

5. Physics and design of hot‐electron spectrometers and transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Are quantum semiconductor devices delivering?;Materials Science and Engineering: B;1995-12

2. Angular dependence of hot-electron transport through a two-dimensional electron-gas layer;Physical Review B;1993-05-15

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