Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces-Reference-Cited by-同舟云学术

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Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

Published:1991-07 Issue: Volume:251-252 Page:424-427
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Hricovini K.,Le Lay G.,Kahn A.,Taleb-Ibrahimi A.,Bonnet J.E.,Lassabatère L.,Dumas M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference11 articles.

1. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces

2. Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces

3. Comment on ‘‘Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces’’

4. Synchrotron radiation investigation and surface spectroscopy studies of prototypical systems: Lead-semiconductor interfaces

5. G. Le Lay, M. Abraham, A. Kahn, K. Hricovini and J.E. Bonnet, Phys. Scr., in press.

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