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Electronic properties of epitaxial erbium silicide

  • Published:1991-07 Issue: Volume:251-252 Page:432-436
  • ISSN:0039-6028
  • Container-title:Surface Science
  • language:en
  • Short-container-title:Surface Science

Author:

Veuillen J.Y.,Tan T.A.Nguyen,Lollman D.B.B.,Guerfi N.,Cinti R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Erbium Silicide Growth in the Presence of Residual Oxygen;Journal of The Electrochemical Society;2011-05-11

2. Scanning tunneling microscopy imaging of facet surfaces of self-organized nanocrystal using metal-coated carbon nanotube tip;Surface Science;2008-03

3. Metastable He deexcitation at semiconductor interfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04

4. Comparison of theoretical and experimental electronic distributions of Si - Ni and Si - Er alloys;Journal of Physics: Condensed Matter;1996-02-05

5. Rare earth overlayers on silicon;Journal of Physics: Condensed Matter;1995-02-06
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