Structure of the InAs{100}−(4 × 2) epilayer surface on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2;The Journal of Chemical Physics;2012-04-21
2. InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal;Journal of Applied Physics;2011-07
3. X-ray diffraction and transmission electron microscopy analysis of ordering and structure in Al1−xInxAs thin films;Journal of Materials Research;2000-01
4. Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces;Advances in Scanning Probe Microscopy;2000
5. X-Ray and Tem Studies of Short-Range Order in Al1−xInxAs Thin Films;MRS Proceedings;1999
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