Surface breakdown phenomena in germanium under high transverse fields
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference6 articles.
1. Measurement of Germanium Surface States by Pulsed Channel Effect
2. INVESTIGATION OF SURFACE STATES ON SEMICONDUCTORS BY THE PULSED FIELD EFFECT
3. Surface mobility measurements in germanium
4. Surface mobility measurements in germanium
5. Internal Field Emission on Germanium Surface at a. c. Field Effect
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1. Nonequilibrium depletion relaxation in strong electric fields under various conditions at the silicon surface;physica status solidi (a);1985-04-16
2. Slow relaxation phenomena on x-irradiated real germanium surfaces;Thin Solid Films;1977-04
3. Relaxation Phenomenon at Turnover in Point Contact Silicon Devices;Journal of The Electrochemical Society;1971
4. Tunnel mechanism in MNOS structures;Physica Status Solidi (a);1970-01-16
5. Relaxation phenomena on indium antimonide surfaces at high electric fields;Surface Science;1968-09
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